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SEMICONDUCTOR
TECHNICAL DATA
HIGH SPEED SWITCHING. FEATURES
Low Forward Voltage : VF=0.25(Typ.) @IF=5mA Very Small Package : VSM.
2
KDR331V
SCHOTTKY BARRIER TYPE DIODE
E B
1
3
MAXIMUM RATING (Ta=25
CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range Operating Temperature Range
)
SYMBOL VRM VR IFM IO IFSM PD Tj Tstg Topr RATING 15 10 100 * 50 * 1* 100 125 -55 -40 125 100 UNIT
P
P
V V mA mA A mW
1. ANODE 1 2. ANODE 2 3. CATHODE
C
DIM MILLIMETERS _ A 1.2 +0.05 _ B 0.8 +0.05 _ C 0.5 + 0.05 _ D 0.3 + 0.05 _ E 1.2 + 0.05 _ 0.8 + 0.05 G 0.40 H _ 0.12 + 0.05 J _ K 0.2 + 0.05 P 5
A
G
H
K
J
D
3
2
1
VSM
* : Unit Rating. Total Rating=Unit Rating 1.5
Marking
Type Name
UW
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
)
TEST CONDITION IF=1mA IF=5mA IF=50mA VR=10V VR=0V, f=1MHz MIN. TYP. 0.21 0.25 0.35 13 MAX. 0.30 0.50 20 40 A pF V UNIT
SYMBOL VF(1)
Forward Voltage
VF(2) VF(3)
Reverse Current Total Capacitance
IR CT
2001. 7. 25
Revision No : 0
1/2
KDR331V
I F - VF
1 FORWARD CURRENT I F (mA)
Ta=23 C
I R - VR
10 REVERSE CURRENT I R (A)
Ta=23 C
1
0.1
0.1
0.01 0 100 200 300 400 500 FORWARD VOLTAGE V F (mV)
0.01 0 2 4 6 8 10 12 REVERSE VOLTAGE VR (V)
C T - VR
14 TOTAL CAPACITANCE C T (pF) 12 10 8 6 4 2 0 0.01 0.1 1 10 20 REVERSE VOLTAGE VR (V) POWER DISSIPATION P (mW) 120 100 80 60 40 20 0 0 25 50
P - Ta
75
100
125
AMBIENT TEMPERATURE Ta ( C)
2001. 7. 25
Revision No : 0
2/2

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